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Référence fabricant

STB150NF55T4

STB150 Series 55 V 120 A 6 mOhm 300 W 140 nC N-Channel MOSFET - D2PAK

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date: 2549
Product Specification Section
STMicroelectronics STB150NF55T4 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.006Ω
Rated Power Dissipation: 300W
Qg Gate Charge: 190nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 35ns
Turn-off Delay Time: 140ns
Rise Time: 180ns
Fall Time: 80ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 4.6mm
Length: 10.4mm
Input Capacitance: 4400pF
Style d'emballage :  TO-263-3 (D2PAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STB150NF55T4 is a N-channel II Power MOSFET it is latest development with unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:

  • Drain-source voltage (VGS = 0) 55 V
  • 100% avalanche tested
  • Max. operating junction temperature -55 °C to 175 °C

Applications:

  • Switching application
Pricing Section
Stock global :
1 000
États-Unis:
1 000
Sur commande :Order inventroy details
7 000
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
10 Semaines
Commande minimale :
1000
Multiples de :
1000
Total 
1 300,00 $
USD
Quantité
Prix unitaire
1 000
$1.30
2 000
$1.29
4 000
$1.28
5 000+
$1.27
Product Variant Information section