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Référence fabricant
IRFS3006TRLPBF
Single N-Channel 60 V 2.5 mOhm 200 nC HEXFET® Power Mosfet - D2PAK
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2521 | ||||||||||
Infineon IRFS3006TRLPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFS3006TRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfs3006trlpbf-infineon-4173915
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFS3006TRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfs3006trlpbf-infineon-4173915
Infineon IRFS3006TRLPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 2.5mΩ |
| Rated Power Dissipation: | 375|W |
| Qg Gate Charge: | 200nC |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
Benefits:
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Lead-Free
Applications:
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
Emballages disponibles
Qté d'emballage(s) :
800 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount