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Référence fabricant

SIHG30N60E-GE3

E-Series N-Channel 600 V 250 W 0.125 Ω 130 nC Flange Mount Power Mosfet-TO-247AC

Modèle ECAD:
Nom du fabricant: Vishay
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Vishay SIHG30N60E-GE3 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 250|W
Qg Gate Charge: 85nC
Style d'emballage :  TO-247AC
Méthode de montage : Through Hole
Fonctionnalités et applications
The SIHG30N60E-GE3 is an E Series Power MOSFET. It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a TO-247AC package.

Features:

  • Low Figure-of-Merit (FOM) Ron x Qg
  • Low Input Capacitance (Ciss)
  • Reduced Switching and Conduction Losses
  • Ultra Low Gate Charge (Qg)
  • Avalanche Energy Rated (UIS)
  • Superjunction Technology

Applications:

  • Server and Telecom Power Supplies
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction Power Supplies (PFC)
  • Lighting
    • High-Intensity Discharge (HID)
    • Fluorescent Ballast Lighting
  • Industrial
    • Welding
    • Induction Heating
    • Motor Drives
    • Battery Chargers
    • Renewable Energy
    • Solar (PV Inverters)

View the List of available E-Series Power MOSFETs.

Keywords: Superjunction, CoolMos

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
49 000
Délai d'usine :
12 Semaines
Commande minimale :
500
Multiples de :
500
Total 
1 690,00 $
USD
Quantité
Prix unitaire
500
$3.38
1 000
$3.35
1 500
$3.34
2 000
$3.32
2 500+
$3.29
Product Variant Information section