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onsemi | MUN5212DW1T1G

Manufacturer Part #

MUN5212DW1T1G

MUN5212DW1 Series 1.9 V SMT NPN-Pre-Biased Digital Transistor - SOT-363

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2446
Product Specification Section
onsemi MUN5212DW1T1G - Technical Attributes
Attributes Table
Polarity: NPN
R1, R2: 22kΩ
Collector Current Max: 100mA
Output Current-Max: 100mA
CE Voltage-Max: 50V
Power Dissipation-Tot: 250mW
Collector - Base Voltage: 50V
Collector - Emitter Saturation Voltage: 0.3V
DC Current Gain-Min: 60
Emitter - Base Voltage: 5V
Configuration: Dual
Collector - Current Cutoff: 0.1µA
Frequency - Transition: -100MHz
Operating Temp Range: -55°C to +150°C
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
1
Factory Lead Time:
30 Weeks
Minimum Order:
24000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$698.40
USD
Quantity
Unit Price
3,000
$0.0301
9,000
$0.0293
12,000
$0.0291
30,000
$0.0285
45,000+
$0.0279
Product Variant Information section