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Manufacturer Part #
IRF7862TRPBF
Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
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Infineon IRF7862TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF7862TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf7862trpbf-infineon-1070093
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF7862TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf7862trpbf-infineon-1070093
Infineon IRF7862TRPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 3.3mΩ |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 30nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 21A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 18ns |
| Rise Time: | 19ns |
| Fall Time: | 11ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.35V |
| Technology: | Si |
| Input Capacitance: | 4090pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount