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Référence fabricant

FDC653N

N-Channel 30 V 0.035 Ohm Enhancement Mode Field Effect Transistor - SSOT-6

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2325
Product Specification Section
onsemi FDC653N - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 17nC
Style d'emballage :  SSOT-6
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDC653N is a 30V 0.035 Ω N-Channel Enhancement Mode Field Effect Transistor available in a SSOT-6 Package .

This N-Channel enhancement mode power field effect transistors is high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

  • 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V, RDS(ON) = 0.055 Ω @ VGS = 4.5 V.
  • Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Stock global :
12 000
États-Unis:
12 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
9 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
930,00 $
USD
Quantité
Prix unitaire
3 000
$0.31
6 000
$0.305
15 000+
$0.30
Product Variant Information section