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Référence fabricant

STP3NK60Z

N-Channel 600 V 3.6 Ohm Flange Mount SuperMESH Power MosFet - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP3NK60Z - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 3.6Ω
Rated Power Dissipation: 45|W
Qg Gate Charge: 11.8nC
Style d'emballage :  TO-220-3 (TO-220AB)
Fonctionnalités et applications

The STP3NK60Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • Typical RDS(on) = 3.3 W
  • Extremely High dv/dt Capability
  • 100% Avalanche Tested
  • Gate Charge Minimized
  • Very low Intrinsic Capacitances
  • Very good manufacturing Repeatability

Applications:

  • High Current, High Speed Switching
  • Ideal for off-line Power Supplies,Adaptors and PFC
  • Lighting

View the Complete family of STP3 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
13 Semaines
Commande minimale :
2000
Multiples de :
50
Total 
1 450,00 $
USD
Quantité
Prix unitaire
50
$0.77
250
$0.745
1 000
$0.725
2 500
$0.715
6 250+
$0.69
Product Variant Information section