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Référence fabricant

STW13NK60Z

STW13NK60ZN: 600 V 550 mOhm 13 A Channel Zener-Protected SuperMESH™ Power Mosfet

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STW13NK60Z - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.55Ω
Rated Power Dissipation: 150|W
Qg Gate Charge: 92nC
Style d'emballage :  TO-247-3
Méthode de montage : Flange Mount
Fonctionnalités et applications

The STW13NK60Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features:

  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability

Applications:

  • Switching applications

View the Complete family of STW1 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
20 Semaines
Commande minimale :
1200
Multiples de :
600
Total 
2 820,00 $
USD
Quantité
Prix unitaire
600
$2.37
1 200
$2.35
1 800
$2.34
2 400
$2.33
3 000+
$2.31
Product Variant Information section